Heterostructure field effect transistors based on A1Sb/GaSb/InAs and A1GaAs/GaAs/InGaAs / Xiaoming Li.

Author
Li, Xiaoming [Browse]
Format
Manuscript, Book
Language
English
Published/​Created
1996.
Description
iii, 102 leaves, bound.

Details

Notes
Department: Electrical Engineering.
Dissertation note
Thesis (Ph.D.)--Columbia University, 1996.
Bibliographic references
Includes bibliographical references.
OCLC
36013272
RCP
C - S
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