Heterostructure field effect transistors based on A1Sb/GaSb/InAs and A1GaAs/GaAs/InGaAs / Xiaoming Li.

Author
Li, Xiaoming [Browse]
Format
Manuscript, Book
Language
English
Published/​Created
1996.
Description
iii, 102 leaves, bound.

Availability

Copies in the Library

Location Call Number Status Location Service Notes
ReCAP - Remote StorageLD1237.5D 1996 .L5913 Browse related items Request

    Details

    Notes
    Department: Electrical Engineering.
    Dissertation note
    Thesis (Ph.D.)--Columbia University, 1996.
    Bibliographic references
    Includes bibliographical references.
    OCLC
    36013272
    RCP
    C - S
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