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Simulation of semiconductor devices and processes. Volume 6 / Heiner Ryssel, Peter Pichler (eds.).
Format
Book
Language
English
Εdition
1st ed. 1995.
Published/Created
Wien : Springer-Verlag, 1995.
Description
1 online resource (XIV, 501 p.)
Availability
Available Online
Springer Nature - Springer Book Archive - Springer Computer Science
Details
Subject(s)
Semiconductors
—
Mathematical models
—
Congresses
[Browse]
Editor
Pichler, P. (Peter)
[Browse]
Ryssel, Heiner
[Browse]
Summary note
SISDEP ’95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.
Notes
"Contains the proceedings of the Sixth International Conference on 'Simulation of Semiconductor Devices and Processes' (SISDEP'95) which was held at the campus of the University of Erlangen-Nuremberg in Erlangen on September 6-8, 1995"--Editorial, p. v.
Bibliographic references
Includes bibliographical references and index.
Source of description
Description based on print version record.
Language note
English
Contents
Numerical Modelling and Materials Characterisation for Integrated Micro Electro Mechanical Systems
Fast and Accurate Aerial Imaging Simulation for Layout Printability Optimization
Efficient and Rigorous 3D Model for Optical Lithography Simulation
Application of the Two-dimensional Numerical Simulation for the Description of Semiconductor Gas Sensors
Analysis of Piezoresistive Effects in Silicon Structures Using Multidimensional Process and Device Simulation
Modeling of Magnetic-Field-Sensitive GaAs Devices Using 3D Monte Carlo Simulation
Quasi Three-Dimensional Simulation of Heat Transport in Thermal-Based Microsensors
Simulating Deep Sub-Micron Technologies: An Industrial Perspective
An Improved Calibration Methodology for Modeling Advanced Isolation Technologies
Algorithms for the Reduction of Surface Evolution Discretization Error
Polygonal Geometry Reconstruction after Cellular Etching or Deposition Simulation
A Data-Model for a Technology and Simulation Archive
A Programmable Tool for Interactive Wafer-State Level Data Processing
Layout Design Rule Generation with TCAD Tools for Manufacturing
ALAMODE: A Layered Model Development Environment
TCAD Optimization Based on Task-Level Framework Services
Cellular Automata Simulation of GaAs-IMPATT-Diodes
Two-Dimensional Simulation of Deep-Trap Effects in GaAs MESFETs with Different Types of Surface States
An Efficient Numerical Method to Solve the Time-Dependent Semiconductor Equations Including Trapped Charge
Advances in Numerical Methods for Convective Hydrodynamic Model of Semiconductor Devices
An Advanced Cellular Automaton Method with Interpolated Flux Scheme and its Application to Modeling of Gate Currents in Si MOSFETs
Piezoresistance and the Drift-Diffusion Model in Strained Silicon
A Novel Approach to HF-Noise Characterization of Heterojunction Bipolar Transistors
Ge Profile for Minimum Neutral Base Transit Time in Si/Si1-yGey Heteroj unction Bipolar Transistors
Performance Optimization in Si/SiGe Heterostructure FETs
On the Integral Representations of Electrical Characteristics in Si Devices
Large Signal Frequency Domain Device Analysis Via the Harmonic Balance Technique
A Method for Extracting the Threshold Voltage of MOSFETs Based on Current Components
2-D MOSFET Simulation by Self-Consistent Solution of the Boltzmann and Poisson Equations Using a Generalized Spherical Harmonic Expansion
Ultra High Performance, Low Power 0.2 µm CMOS Microprocessor Technology and TCAD Requirements
Viscoelastic Modeling of Titanium Silicidation
Multidimensional Nonlinear Viscoelastic Oxidation Modeling
Three-Dimensional Integrated Process Simulator: 3D-MIPS
Effect of Process-Induced Mechanical Stress on Circuit Layout
The Simulation System for Three-Dimensional Capacitance and Current Density Calculation with a User Friendly GUI
Numerical and Analytical Modelling of Head Resistances of Diffused Resistors
New Spreading Resistance Effect for Sub-0.50µm MOSFETs: Model and Simulation
The Role of SEMATECH in Enabling Global TCAD Collaboration
Three Dimensional Simulation for Sputter Deposition Equipment and Processes
Comprehensive Reactor, Plasma, and Profile Simulator for Plasma Etch Processes
Modeling the Wafer Temperature in a LPCVD Furnace
Determination of Electronic States in Low Dimensional Heterostructure and Quantum Wire Devices
An Exponentially Fitted Finite Element Scheme for Diffusion Process Simulation on Coarse Grids
Achievement of Quantitatively Accurate Simulation of Ion-Irradiated Bipolar Power Devices
Modeling of Substrate Bias Effect in Bulk and SOI SiGe-channel p-MOSFETs
A Very Fast Three-Dimensional Impurity Profile Simulation Incorporating An Accumulated Diffusion Lenght and its Application to the Design of Power MOSFETs
Recovery of Vectorial Fields and Currents in Multidimensional Simulation
An Efficient Approach to Solving The Boltzmann Transport Equation in Ultra-fast Transient Situations
Modeling of a Hot Electron Injection Laser
Scaling Considerations of Bipolar Transistors Using 3D Device Simulation
Three-Dimensional Monte Carlo Simulation of Boron Implantation into Single-Crystal Silicon Considering Mask Structure
A fully 2D, Analytical Model for the Geometry and Voltage Dependence of Threshold Voltage in Submicron MOSFETs
On the Influence of Band Structure and Scattering Rates on Hot Electron Modeling
Finite Element Monte Carlo Simulation of Recess Gate FETs
Coupled 2D-Microscopic/Macroscopic Simulation of Nanoelectronic Heterojunction Devices
On the Discretization of van Roosbroeck’s Equations with Magnetic Field
Modeling of Impact Ionization in a Quasi Deterministic 3D Particle Dynamics Semiconductor Device Simulation Program
Accurate Modeling of Ti/TiN Thin Film Sputter Deposition Processes
Monte Carlo Simulation of InP/InGaAs HBT with a Buried Subcollector
Design and Optimization of Millimeter-Wave IMPATT Oscillators Using a Consistent Model for Active and Passive Circuit Parts
Generalised Drift-Diffusion Model of Bipolar Transport in Semiconductors
Efficient 3D Unstructured Grid Algorithms for Modelling of Chemical Vapour Deposition in Horizontal Reactors
Preventing Critical Conditions in IGBT Chopper Circuits by a Multi-Step Gate Drive Mode
Control of Plasma Dynamics within Double-Gate-Turn-Off Thyristors (D-GTO)
A Vector Level Control Function for Generalized Octree Mesh Generation
Comparison of Hydrodynamic Formulations for Non-Parabolic Semiconductor Device Simulations
Influence of Analytical MOSFET Model Quality on Analog Circuit Simulation
2-D Adaptive Simulation of Dopant Implantation and Diffusion
Optimization of a Recessed LOCOS Using a Tuned 2-D Process Simulator
Simulation of Complex Planar Edge Termination Structures for Vertical IGBTs by Solving the Complete Semiconductor Device Equations
Numerical Analysis of Hot-Electron Effects in GaAs MESFETs
Capacitance Model of Microwave InP-Based Double Heterojunction Bipolar Transistors
Estimation of the Charge Collection for the Soft-Error Immunity by the 3D-Device Simulation and the Quantitative Investigation
D. C. Electrothermal Hybrid BJT Model for SPICE
Alpha-Particle Induced Soft Error Rate Evaluation Tool and User Interface
Hydrodynamic Modeling of Electronic Noise by the Transfer Impedance Method
Monte Carlo Simulation of S-Type Negative Differential Conductance in Semiconductor Heterostructures
Two-Barrier Model for Description of Charge Carriers Transport Processes in Structures with Porous Silicon
Monte-Carlo Simulation of Inverted Hot Carrier Distribution Under Strong Carrier-Optical Phonon Scattering
Algorithms and Models for Simulation of MOCVD of III-V Layers in the Planetary Reactor
An Approach for Explaining Drift Phenomena in GTO Devices Using Numerical Device Simulation
Parallel 3D Finite Element Power Semiconductor Device Simulator Based on Topologically Rectangular Grid
Investigation of Silicon Carbide Diode Structures via Numerical Simulations Including Anisotropic Effects
A New Physical Compact Model of CLBTs for Circuit Simulation Including Two-Dimensional Calculations
Combining 2D and 3D Device Simulation with Circuit Simulation for Optimising High Efficiency Silicon Solar Cells
A New Quasi-two Dimensional HEMT Model
Simulations of the Forward Behaviour of Hybrid Schottky-/pn-Diodes
HFET Breakdown Study by 2D and Quasi 2D Simulations: Topology Influence
Investigation of GTO Turn-on in an Inverter Circuit at Low Temperatures Using 2-D Electrothermal Simulation
Large Scale Thermal Mixed Mode Device and Circuit Simulation
Scaling of Conventional MOSFET’s to the 0.1 µm Regime
Monte Carlo Simulation of Carrier Capture at Deep Centers for Silicon and Gallium Arsenide Devices
A New Statistical Enhancement Technique in Parallelized Monte Carlo Device Simulation
Stability Issues in Self-Consistent Monte Carlo-Poisson Simulations
The Path Integral Monte Carlo Method for Quantum Transport on a Parallel Computer
A Monte Carlo Transport Model Based on Sperical Harmonics Expansion of the Valence Bands
Full-Band Monte Carlo Transport Calculation in an Integrated Simulation Platform
On Particle-Mesh Coupling in Monte Carlo Semiconductor Device Simulation
T2CAD: Total Design for Sub-µm Process and Device Optimization with Technology-CAD
Modelling Impact-Ionization in the Framework of the Spherical-Harmonics Expansion of the Boltzmann Transport Equation with Full-Band Structure Effects
Impact Ionization Model Using Second- and Fourth-Order Moments of Distribution Functions
An Accurate NMOS Mobility Model for 0.25µm MOSFETs
A 2-D Modeling of Metal-Oxide-Polycrystalline Silicon-Silicon (MOPS) Structures for the Determination of Interface State and Grain Boundary State Distributions
Sensitivity Analysis of an Industrial CMOS Process Using RSM Techniques
Process- and Devicesimulation of Very High Speed Vertical MOS Transistors
Two-Dimensional Transient Simulation of Charge-Coupled Devices Using MINIMOS NT
Determination of Vacancy Diffusivity in Silicon for Process Simulation
Precipitation Phenomena and Transient Diffusion/Activation During High Concentration Boron Annealing
Modelling of Silicon Interstitial Surface Recombination Velocity at Non-Oxidizing Interfaces
Efficient Hybrid Solution of Sparse Linear Systems
Mesh Generation for 3D Process Simulation and the Moving Boundary Problem
Three-Dimensional Grid Adaption Using a Mixed-Element Decomposition Method
Unified Grid Generation and Adaptation for Device Simulation
Platinum Diffusion at Low Temperatures
Lattice Monte—Carlo Simulations of Vacancy-Mediated Diffusion and Implications for Continuum Models of Coupled Diffusion
A New Hydrodynamic Equation for Ion-Implantatio.
Show 113 more Contents items
ISBN
3-7091-6619-5
Doi
10.1007/978-3-7091-6619-2
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Simulation of semiconductor devices and processes, vol. 6 / H. Ryssel, P. Pichler (eds.).
id
SCSB-3407100