Skip to search
Skip to main content
Catalog
Help
Feedback
Your Account
Library Account
Bookmarks
(
0
)
Search History
Search in
Keyword
Title (keyword)
Author (keyword)
Subject (keyword)
Title starts with
Subject (browse)
Author (browse)
Author (sorted by title)
Call number (browse)
search for
Search
Advanced Search
Bookmarks
(
0
)
Princeton University Library Catalog
Start over
Cite
Send
to
SMS
Email
EndNote
RefWorks
RIS
Printer
Bookmark
Near infrared detectors based on silicon supersaturated with transition metals : doctoral thesis accepted by universidad complutense de madrid, madrid, spain / Daniel Montero AÌlvarez.
Author
Montero AÌlvarez, Daniel
[Browse]
Format
Book
Language
English
Εdition
1st ed. 2021.
Published/Created
Cham, Switzerland : Springer, [2021]
©2021
Description
1 online resource (XXXVI, 230 p. 137 illus., 124 illus. in color.)
Availability
Available Online
Springer Nature - Springer Chemistry and Materials Science eBooks 2021 English International
Details
Subject(s)
Silicon compounds
[Browse]
Infrared detectors
—
Materials
[Browse]
Series
Springer Theses, Recognizing Outstanding Ph.D. Research,
[More in this series]
Springer Theses, Recognizing Outstanding Ph.D. Research, 2190-5053
[More in this series]
Summary note
This thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations. Afterwards, the crystallinity is recovered by means of a pulsed laser process. The material is used to fabricate planar photodiodes, which are later characterized using current-voltage and quantum efficiency measurements. The prototypes showed improved sub-bandgap responsivity up to 0.45 eV at room temperature. The work is further supported by a collaboration with STMicroelectronics, where the supersaturated material was integrated into CMOS-based sensors at industry level. The results show that Ti supersaturated Si is compatible in terms of contamination, process integration and uniformity. The devices showed similar performance to non-implanted devices in the visible region. This fact leaves the door open for further integration of supersaturated materials into CMOS Image Sensors.
Bibliographic references
Includes bibliographical references.
Source of description
Description based on print version record.
Contents
Introduction
Experimental techniques
Results: NLA using a short pulse duration KrF laser
Results: NLA using a long pulse duration XeCl laser
Results: Integrating the supersaturated material in a CMOS pixel matrix.
Show 2 more Contents items
ISBN
3-030-63826-X
Doi
10.1007/978-3-030-63826-9
Statement on language in description
Princeton University Library aims to describe library materials in a manner that is respectful to the individuals and communities who create, use, and are represented in the collections we manage.
Read more...
Other views
Staff view
Ask a Question
Suggest a Correction
Report Harmful Language
Supplementary Information