LEADER 06192cam a2200661Ii 4500001 99125320161806421 005 20251214165458.0 006 m o d | 007 cr -n--------- 008 180331t20142014fluadf ob 001 0 eng d 020 1-351-83171-2 020 1-315-21582-9 020 1-4665-8383-5 020 9781315215822 024 7 10.1201/b16396 |2doi 035 (CKB)3710000000083504 035 (EBL)1383547 035 (SSID)ssj0001112359 035 (PQKBManifestationID)11735901 035 (PQKBTitleCode)TC0001112359 035 (PQKBWorkID)11160838 035 (PQKB)11173769 035 (OCoLC)872670994 035 (MiAaPQ)EBC1383547 035 (OCoLC)868488063 035 (CaSebORM)9781466583832 035 (FlBoTFG)9781315215822 035 (EXLCZ)993710000000083504 040 FlBoTFG |cFlBoTFG |erda 041 eng 050 4 TK7871.85 |b.F794 2014 082 621.3815 084 TEC008000TEC008010 |2bisacsh 100 1 Fu, Yue |c(Electrical engineer), |eauthor. 245 10 Integrated power devices and TCAD simulation / |cYue Fu, Zhanming Li, Wai Tung Ng, Johnny K.O. Sin. 250 1st ed. 264 1 Boca Raton : |bCRC Press, |c[2014] 264 4 |c©2014 300 1 online resource (358 p.) 336 text |btxt 337 computer |bc 338 online resource |bcr 490 0 Devices, circuits, and systems 500 Description based upon print version of record. 504 Includes bibliographical references. 505 0 CONTENTS; Preface; About the Authors; Chapter 1 Power Electronics, the Enabling Green Technology; 1.1 Introduction to Power Electronics; 1.2 History of Power Electronics; 1.3 DC/DC Converters; 1.4 Linear Voltage Regulators; 1.5 Switched Capacitor DC/DC Converters (Charge Pumps); 1.6 Switched Mode DC/DC Converters; 1.7 Comparison between Linear Regulators, Charge Pumps, and SwitchedRegulators; 1.8 Topologies for Nonisolated DC/DC Switched Converters; 1.9 Topologies for Isolated Switching Converters; 1.10 SPICE Circuit Simulation; 1.11 Power Management Systems for Battery-Powered Devices 505 8 1.12 SummaryChapter 2 Power Converters and Power Management ICs; 2.1 Dynamic Voltage Scaling for VLSI Power Management; 2.2 Integrated DC/DC Converters; 2.3 Summary; Chapter 3 Semiconductor Industry and More than Moore; 3.1 Semiconductor Industry; 3.2 History of the Semiconductor Industry; 3.3 Food Chain Pyramid of the Semiconductor Industry; 3.4 Semiconductor Companies; 3.5 More than Moore; Chapter 4 Smart Power IC Technology; 4.1 Smart Power IC Technology Basics; 4.2 Smart Power IC Technology: Historical Perspective; 4.3 Smart Power IC Technology: Industrial Perspective 505 8 4.4 Smart Power IC Technology: Technological PerspectiveChapter 5 Introduction to TCAD Process Simulation; 5.1 Overview; 5.2 Mesh Setup and Initialization; 5.3 Ion Implantation; 5.4 Deposition; 5.5 Oxidation; 5.6 Etching; 5.7 Diffusion; 5.8 Segregation; 5.9 Process Simulator Models Calibration; 5.10 Introduction to 3D TCAD Process Simulation; 5.11 GPU Simulation; Chapter 6 Introduction to TCAD Device Simulation; 6.1 Overview; 6.2 Basics about Device Simulation; 6.3 Physical Models; 6.4 AC Analysis; 6.5 Trap Model in TCAD Simulation; 6.6 Quantum Tunneling 505 8 6.7 Device Simulator Models CalibrationChapter 7 Power IC Process Flow with TCAD Simulation; 7.1 Overview; 7.2 A Mock-Up Power IC Process Flow; 7.3 Smart Power IC Process Flow Simulation; Chapter 8 Integrated Power Semiconductor Devices with TCAD Simulation; 8.1 PN Junction Diodes; 8.2 Bipolar Junction Transistors; 8.3 LDMOS; Chapter 9 Integrated Power Semiconductor Devices with 3D TCAD Simulations; 9.1 3D Device Layout Effect; 9.2 3D Simulation of LIGBT; 9.3 Super Junction LDMOS; 9.4 Super Junction Power FinFET; 9.5 Large Interconnect Simulation; Chapter 10 GaN Devices, an Introduction 505 8 10.1 Compound Materials versus Silicon10.2 Substrate Materials for GaN Devices; 10.3 Polarization Properties of III-Nitride Wurtzite; 10.4 AlGaN/GaN Heterojunction; 10.5 Traps in AlGaN/GaN Structure; 10.6 A Simple AlGaN/GaN HEMT; 10.7 GaN Power HEMT Example I; 10.8 GaN Power HEMT Example II; 10.9 Gate Leakage Simulation of GaN HEMT; 10.10 Market Prospect of Compound Semiconductors for Power Applications; Appendix A: Carrier Statistics; Appendix B: Process Simulation Source Code; Appendix C: Trap Dynamics and AC Analysis; Bibliography 520 From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems. Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs).Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems. -- |cProvided by publisher. 546 English 588 Description based on print version record. 650 0 Power semiconductors |xComputer-aided design. 650 0 Three-dimensional imaging. 700 1 Li, Zhanming, |eauthor. 700 1 Ng, Wai Tung, |eauthor. 700 1 Sin, Johnny K. O., |eauthor. 776 08 |z1-4665-8381-9 830 0 Devices, Circuits, and Systems 906 BOOK