Details

Subject(s)

• Gallium nitride [Browse]
• Electronics—Research [Browse]

Editor

• Medjdoub, Farid [Browse]
• Iniewski, Krzysztof, 1960- [Browse]

Series

• Devices, circuits, and systems ; 47. [More in this series]
• Devices, Circuits, and Systems ; 47

Summary note

Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.

Notes

Description based upon print version of record.

Bibliographic references

Includes bibliographical references at the end of each chapters.

Source of description

Description based on online resource; title from PDF title page (ebrary, viewed November 11, 2015).

Language note

English

Contents

• chapter 1. GaN high-voltage power devices / Joachim Wurfl
• chapter 2. AlGaN/GaN High-electron-mobility transistors grown by ammonia source molecular beam epitaxy / Yvon Cordier
• chapter 3. Gallium nitride transistors on large-diameter Si(111) substrate / Subramaniam Arulkumaran and Geok Ing Ng
• chapter 4. GaN-HEMT scaling technologies for high-frequency radio frequency and mixed signal applications / Keisuke Shinohara
• chapter 5. Group III-nitride microwave monolithically integrated circuits / Rudiger Quay
• chapter 6. GaN-based metal/insulator/semiconductor-type Schottky hydrogen sensors / Ching-Ting Lee, Hsin-Ying Lee, and Li-Ren Lou
• chapter 7. InGaN-based solar cells / Ezgi Dogmus and Farid Medjdoub
• chapter 8. III-nitride semiconductors : new infrared intersubband technologies / Mark Beeler and Eva Monroy
• chapter 9. Gallium nitride-based interband tunnel junctions / Siddharth Rajan, Sriram Krishnamoorthy, and Fatih Akyol
• chapter 10. Trapping and degradation mechanisms in GaN-based HEMTs / Matteo Meneghini, Gaudenzio Meneghesso, and Enrico Zanoni.

Show 7 more Contents items

ISBN

• 9781315215426
• 131521542X
• 9781482220049
• 1482220040

OCLC

924714209

Doi

10.1201/b19387

Statement on responsible collection description

Princeton University Library aims to describe library materials in a manner that is respectful to the individuals and communities who create, use, and are represented in the collections we manage. Read more...