Ferroelectric-gate field effect transistor memories : device physics and applications / Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon, editors.

Format
Book
Language
English
Εdition
2nd ed.
Published/​Created
Singapore : Springer, 2020.
Description
1 online resource (421 pages).

Details

Subject(s)
Editor
Series
Notes
Description based upon print version of record.
Other title(s)
Springer book archives.
ISBN
  • 9789811512124 ((electronic bk.))
  • 9811512124 ((electronic bk.))
OCLC
1148895632
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